Effect of N2 addition on growth and properties of titanium nitride films obtained by atmospheric pressure chemical vapor deposition

Titanium nitride (TiN) films were prepared by atmospheric pressure chemical vapor deposition using TiCl4 and NH3. The effects of N-2 addition on the growth characteristics and electrical resistivity of the TiN films were studied. When more than 20 vol.% N-2 was added into, the growth rate of TiN films decreased dramatically and the large dome-like grain was favorable. The N/Ti ratio and lattice parameter of TiN films decreased with the N-2 volume fraction increasing. The preferred orientation of TiN (2 0 0) was found and the texture coefficient of (2 0 0) linearly increased with increasing of the volume fraction of N-2 added. The resistivity of TiN film slightly increased when 10 vol.% N-2 was added, but it decreased remarkably when more than 20 vol.% N-2 was added. (C) 2002 Elsevier Science B.V. All rights reserved.