Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 10, Pages 1782-1784Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1504491
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Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. (C) 2002 American Institute of Physics.
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