4.6 Article

High structural order in thin films of the organic semiconductor diindenoperylene

Journal

APPLIED PHYSICS LETTERS
Volume 81, Issue 12, Pages 2276-2278

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1508436

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We report extraordinary structural order along the surface normal in thin films of the organic semiconductor diindenoperylene (DIP) deposited on silicon-dioxide surfaces. Cross-sectional transmission electron microscopy (TEM), noncontact atomic force microscopy (NC-AFM), as well as specular and diffuse x-ray scattering measurements were performed to characterize thin films of DIP. Individual monolayers of essentially upright-standing DIP molecules could be observed in the TEM images indicative of high structural order. NC-AFM images showed large terraces with monomolecular steps of approximate to16.5 Angstrom height. Specular DIP Bragg reflections up to high order with Laue oscillations confirmed the high structural order. A semi-kinematic fit to the data allowed a precise determination of the oscillatory DIP electron density rho(el.,DIP)(z). The mosaicity of the DIP thin films was obtained to be smaller than 0.01degrees. (C) 2002 American Institute of Physics.

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