Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 14, Pages 2647-2649Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1512330
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We present first- and second-order Raman spectra of boron-doped multiwalled carbon nanotubes. The Raman intensities are analyzed as a function of the nominal boron concentration. The intensities of both the D mode and the high-energy mode in the first-order spectra increase with increasing boron concentration, if normalized with respect to a second-order mode. We interpret this result as an indication that the high-energy mode in carbon nanotubes is defect-induced in a similar way as the D mode. Based on this result, we provide a preliminary quantitative relation between the boron concentration and the Raman intensity ratios. (C) 2002 American Institute of Physics.
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