Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 14, Pages 2602-2604Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1511280
Keywords
-
Categories
Ask authors/readers for more resources
The effects of grain boundaries on the characteristics of Pb(Zr,Ti)O-3 (PZT) thin films were investigated by locating the top electrode within grain, on the line boundary, or on the grain-boundary intersection in a controlled manner. It turned out that, when there was no grain boundary in the area measured, excellent ferroelectric and electrical performance was obtained. On the other hand, serious degradation was observed in terms of polarization, leakage current, breakdown field, and fatigue characteristics when grain boundaries were included in the area studied. It was found that degradation of PZT thin films was closely correlated with the length of grain boundary in the area measured. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available