Journal
NANO LETTERS
Volume 2, Issue 10, Pages 1043-1046Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl0256309
Keywords
-
Ask authors/readers for more resources
We report the catalyst-free horizontal growth of carbon nanotubes on the Si face of hexagonal silicon carbide (6H-SiC) at temperatures above 1500 degreesC. These nanotubes are single walled with a very narrow distribution of diameters. Nanotubes tend to follow the atomic structure of the surface, leading to preferential orientation and the development of ordered networks of tubes. Manipulation of nanotubes using atomic force microscopy indicates that the tubes move on the surface at high temperature and are stabilized in the directions parallel and perpendicular to the step edges.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available