Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 17, Issue 10, Pages L63-L67Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/17/10/103
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We report on an optical study of InAs quantum dots grown on an InP(311)B substrate, and lasing at 1.55 mum wavelength. A new growth technique, called the 'double-cap' technique, has been used to reach 1.55 mum at 300 K. The samples are characterized at low temperature and room temperature by continuous-wave and time-resolved photoluminescence techniques. The wetting layer emission and a dot excited state emission are clearly observed for the first time in this kind of dot, and the results are consistent with theoretical calculations. At the same time, these structures seem to have a better capture efficiency.
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