Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

Four CVD SiOCH films deposited at various conditions were used for comparative evaluation. The films were evaluated by RBS, spectroscopic ellipsometry, and ellipsometric porosimetry. Oxygen plasma resistance was studied by spectroscopic ellipsometry and TOF-SIMS analysis after exposure of the films to downstream oxygen plasma. The different deposition conditions result in different carbon content and different porosity. The film with the highest carbon content has the lowest porosity and vice versa. As carbon content of films increases and their porosity decreases, the SiOCH films become more resistant to oxygen plasma. (C) 2002 Elsevier Science B.V. All rights reserved.