4.6 Article

A self-aligned fabrication process for silicon quantum computer devices

Journal

NANOTECHNOLOGY
Volume 13, Issue 5, Pages 686-690

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/13/5/330

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We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal of using the nuclear spins of P-31 donors in Si-28 as qubits, controlled by metal surface gates and measured using single-electron transistors (SETs). The of accurate registration P-31 donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation.

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