Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 15, Pages 2722-2724Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1512331
Keywords
-
Categories
Ask authors/readers for more resources
Thin low-temperature AlN interlayers can be applied to reduce stress to grow thick crack-free AlGaN layers on GaN buffer layers on sapphire and thick crack-free GaN layers on Si. The mechanism leading to stress reduction is investigated by high resolution x-ray diffractometry measurements on metalorganic chemical vapor phase epitaxy grown samples on Si(111) with different interlayer deposition temperatures. A decrease of tensile stress with decreasing interlayer growth temperature is observed. From reciprocal space maps we conclude that interlayers grown at high temperatures are pseudomorphic, while grown at lower temperatures they are relaxed. Therefore, AlGaN or GaN layers grown on a low temperature AlN interlayer grow under compressive interlayer-induced strain. The stress in the GaN layer depends on the growth temperature that likely controls the amount of AlN interlayer relaxation. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available