Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 16, Pages 2980-2982Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1514832
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An electrochemical etching technique has been developed that provides continuous control over the porosity of a porous silicon layer as a function of etching depth. Thin films with engineered porosity gradients, and thus a controllable gradient in the index of refraction, have been used to demonstrate broadband antireflection properties on silicon wafer and solar cell substrates. A simulation was also developed to examine the effects of specific porosity profiles on film reflectivity. (C) 2002 American Institute of Physics.
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