Journal
JOURNAL OF APPLIED PHYSICS
Volume 92, Issue 8, Pages 4486-4489Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1503393
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We present a model based on the two-dimensional transfer matrix formalism to calculate single-electron states in a random wide-gap semiconductor quantum dot superlattice. With a simple disorder model both the random arrangement of quantum dots (configurational disorder) and the spatial inhomogeneities of their shape (morphological disorder) are considered. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic electron scattering by disorder. (C) 2002 American Institute of Physics.
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