Ultrahigh field electron cyclotron resonance absorption in In1-xMnxAs films -: art. no. 161307

We have carried out an ultrahigh-field cyclotron resonance study of n-type In1-xMnxAs films, with Mn composition x ranging from 0% to 12%, grown on GaAs by low-temperature molecular-beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing x. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the s-d and p-d exchange-coupling constants, alpha and beta, for this important III-V dilute magnetic semiconductor system.