Enhanced luminescence of pulsed-laser-deposited Y2O3:Eu3+ thin-film phosphors by Li doping

Y2O3:Eu3+ and Li-doped Y2O3:Eu3+ luminescent thin films have been grown on sapphire substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) brightness data obtained from Li-doped Y2O3:Eu3+ films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high-quality Li-doped Y2O3:Eu3+ thin-film red phosphor. In particular, the incorporation of Li+ ions into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped Y1.84Li0.08Eu0.08O3, whose brightness was increased by a factor of 2.7 in comparison with that of Y2O3: Eu3+ films. This phosphor may promise for application to the flat panel displays. (C) 2002 American Institute of Physics.