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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 41, Issue 11B, Pages 6777-6780Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.41.6777
Keywords
ferroelectromagnetism; ferroelectricity; ferromagnetism; PrFeO3; PbTiO3; BiFeO3; thin film
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Thin film materials of new solid solution systems have been explored for attaining ferroelectromagnetic property by combining antiferromagnetic and ferroelectric end members such as BiFeO3, PrFeO3, and PbTiO3. Thin films of the 0.35PrFeO(3)-0.65PbTiO(3) and the 0.2PrFeO(3)-0.2BiFeO(3)-0.6PbTiO(3) doped by x mol% Ta2O5 (x = 0, 0.75 and 1.5) have been prepared by spinning on Pt/Ti/SiO2/Si substrate and annealing at 550degreesC for 30 min. Crystal structures, microstructures, P-E hysteresis curves and M-H hysteresis curves were characterized. The 0.35PrFeO(3)-0.65PbTiO(3) and the 0.2PrFeO(3)-0.2BiFeO(3)-0.6PbTiO(3) thin films showed weak ferromagnetism. The Ta2O5-doping improved,ferroelectromagnetic property. The 0.2PrFeO(3)-0.2BiFeO(3)-0.6PbTiO(3). thin film doped by 1.5 mol% Ta2O5 showed ferroelectromagnetic properties, spontaneous magnetization (M-s) of 0.1 emu/g and the remanent polarization (P-r) of 1.67 muC/cm(2).
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