Nitrogen doping of polycrystalline 3C-SiC films grown by single-source chemical vapor deposition

The chemical, structural, and electrical properties of n-doped cubic silicon carbide films grown from the precursors 1,3-disilabutane and NH3 are investigated. Controlled nitrogen doping of 3C-SiC is demonstrated at 850 degreesC by the addition of NH3 to the reactor feed gas. This is shown to modify the growth rate, the chemical nature, and the crystalline quality of the deposited films. However, we show that an optimal conductivity is achieved without significant changes to the growth rate and crystalline quality of the 3C-SiC thin films. (C) 2002 Elsevier Science B.V. All rights reserved.