Journal
PHYSICAL REVIEW B
Volume 66, Issue 18, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.66.184109
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We present the analytical study of stability loss and evolution of domain structure in inhomogeneous ferroelectric (ferroelastic) samples for exactly solvable models. The model assumes a short-circuited ferroelectric capacitor (free ferroelastic) with two regions with slightly different critical temperatures T-c1>T-c2, where T-c1-T-c2
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