Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 19, Pages 3579-3581Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1519732
Keywords
-
Categories
Ask authors/readers for more resources
Scanning Kelvin force microscopy is applied to study the charge nature of threading dislocations on GaN surfaces. On the oxidized surface, the surface potential maps show little change near dislocations, indicating that if the dislocations are charged in the bulk, the charges are either screened or depleted due to band bending. After cleaning in hot H3PO4, the potential near dislocations located at domain boundaries and inside domains is found to be lower, consistent with excess local negative fixed charges. Curiously, no contrast was seen for the screw dislocations at the centers of growth spirals even after H3PO4 treatment. Thus, either these screw dislocations have no gap states, or if they do have gap states, the positions are higher in energy (closer to conduction band edge) than the gap states of other dislocations. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available