S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

S-doped ZnO (ZnO:S) film was fabricated by supplying ZnS species from laser ablation of a ZnS target during ZnO growth. Variations of lattice constants and band gaps with respect to S content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation energy and resistivity than those of ZnO owing to higher carrier concentration. Despite the absence of magnetic elements, the large magnetoresistance amount of 26% was observed at 3 K from ZnO:S film. (C) 2002 American Institute of Physics.