Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (similar to95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects. The photo-EPR results obtained for the positively charged carbon vacancy (V-C(+)) can be explained by a deep donor model with the (+/0) level located at (1.47+/-0.06) eV above the valence band. (C) 2002 American Institute of Physics.