Influence of impurities on short range electron transport in GaAs

The influence of Cr impurities on muonium atom formation in GaAs has been studied using muon spin relaxation techniques with alternating electric fields. The results suggest that electron transport to and capture by the muon is suppressed by capture/scattering on intervening Cr centers. The length scale involved is estimated to be about 3x10(-6) cm. This offers an opportunity to study electron transport to positive centers in semiconductors on a microscopic scale.