Journal
APPLIED PHYSICS LETTERS
Volume 81, Issue 23, Pages 4449-4451Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1526167
Keywords
-
Categories
Ask authors/readers for more resources
Spontaneous localization of hole states is predicted at all separations in vertically stacked InAs/GaAs self-assembled quantum dots. Eight-band k.p theory shows that valence band mixing enhanced by the unique three-dimensional strain distribution, subjects holes to very different environment than electrons. As a result, low energy holes are confined to their respective dots without forming bonding or antibonding states. This localization plays the same role as a vertically applied electric field in coupled quantum systems, and substantially decreases the exciton binding energy, which may be an impediment to the formation of entangled states in quantum-dot molecules. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available