Journal
THIN SOLID FILMS
Volume 420, Issue -, Pages 112-116Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(02)00742-3
Keywords
n-ZnO/p-Si photodiode; current-voltage; photoelectric; leakage current; interface junction
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We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 degreesC using Ar:O-2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 degreesC. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 degreesC conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property. (C) 2002 Elsevier Science B.V All rights reserved.
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