Inorganic solution-processed hole-injecting and electron-blocking layers in polymer light-emitting diodes

The use of the solution-processed layered transition metal dichalcogenide (LTMDC) MoS2 as a hole-injecting electrode in polymer light-emitting diodes (LEDs) is reported. MoS2 functions as a very high work function metal and, in combination with an electron-blocking layer in the form of MoO3, provides good LED performance. In this study we investigated model LED devices with a single semiconductor layer, namely, the electron transporting polymer poly-[2,7-(9,9(')-di-n-octylfluorene)-3,6-benzothiadiazole]. LED operation was successfully modeled using experimentally determined work functions, carrier mobilities, and barrier properties. Good agreement between experiment and model allows us to demonstrate that the MoS2 and the MoO3 layers act as a high work function hole-injection layer (MoS2) and an electron extraction barrier layer (MoO3), respectively. They improve device performance by allowing the buildup of electron density at the oxide/emissive layer interface which generates a local field, enhancing hole injection and recombination. Furthermore, the model shows the importance of controlling the thickness of the blocking layer to optimize device performance. The wide variety of polymeric emitters available and the range of electronic properties displayed by the LTMDC family and their corresponding oxides, provides the potential to tailor device performance through the selection of suitable organic and inorganic components. (C) 2002 American Institute of Physics.