4.6 Article

Lasing from InGaAs quantum dots in an injection microdisk

Journal

APPLIED PHYSICS LETTERS
Volume 82, Issue 3, Pages 319-321

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1538312

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An injection microdisk laser structure is realized using self-assembled InGaAs quantum dots (QDs) as the active layer. Single-mode continuous-wave lasing at similar to5 K from double layer (similar to2.5x10(10) cm(-2) per layer) QDs in similar to4 mum diameter microdisks is reported. The threshold current of this device was as low as 69 muA. The estimated spontaneous emission factor is >0.05. (C) 2003 American Institute of Physics.

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