3.8 Article Proceedings Paper

Three dimensional crystallization simulation and recording layer thickness effect in phase change optical recording

Publisher

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.800

Keywords

phase change optical recording; GeSbTe; crystallization simulation; thickness effects; 3-D crystallization model

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The development of phase change optical recording requires better understanding of the crystallization kinetics of recording materials. Most of the existing simulation methods are based on two-dimensional crystallization models. In this work, we develop a new method to simulate the crystallization of phase change recording material in three dimensions. This method can be used to simulate the recording layer thickness effect on the crystallization. We first set up an isothermal model, to explain the recording layer thickness effect. With this model, the 3-D crystallization simulation shows a similar trend as experimental data in the literature. We also discuss the parameter selection for the simulation.

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