Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 42, Issue 2B, Pages 800-803Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.800
Keywords
phase change optical recording; GeSbTe; crystallization simulation; thickness effects; 3-D crystallization model
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The development of phase change optical recording requires better understanding of the crystallization kinetics of recording materials. Most of the existing simulation methods are based on two-dimensional crystallization models. In this work, we develop a new method to simulate the crystallization of phase change recording material in three dimensions. This method can be used to simulate the recording layer thickness effect on the crystallization. We first set up an isothermal model, to explain the recording layer thickness effect. With this model, the 3-D crystallization simulation shows a similar trend as experimental data in the literature. We also discuss the parameter selection for the simulation.
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