Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

In this article, we present data on the properties of La-based high-k dielectric films prepared by oxidation of La deposited by physical vapor deposition on silicon. Films are characterized by x-ray photoelectron spectroscopy, infrared absorption, and capacitance versus voltage analysis. We find that when we oxidize La metal sputter deposited on Si substrates, it reacts with the silicon substrate to form La silicate. La films as thick as 300 Angstrom will react completely with Si under moderate oxidation conditions (900degreesC for 10 min) suggesting a very rapid silicidation reaction between La and Si. Under some processing conditions the as-deposited films contain a small La2O3 component that reduces to La, silicate upon anneal at high temperatures. La-silicate films do not phase separate into La2O3 and SiO2 upon annealing at 1050degreesC, and their resistance to H2O incorporation depends critically on the oxidation temperature. Electrical measurements show a high concentration of positive fixed charge. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1531818].