Growth and characteristics of Fe-doped GaN

The Fe doping of GaN by metalorganic chemical vapor deposition was studied. Si-Fe co-doping experiments revealed that the compensation activity of Fe was 34%. The Fe-doping response was investigated in detail by secondary ion mass spectroscopy. The observed slow Fe concentration turn-on and turn-off was found to be related to the sample surface, rather than to the reactor environment. Improved turn-off was demonstrated by etching a GaN:Fe surface in acids before the GaN regrowth. Fe segregation on the growth surface was proposed to explain the observed Fe-doping response. (C) 2002 Elsevier Science B.V. All rights reserved.