Journal
JOURNAL OF SUPERCONDUCTIVITY
Volume 16, Issue 1, Pages 179-182Publisher
KLUWER ACADEMIC/PLENUM PUBL
DOI: 10.1023/A:1023238229806
Keywords
(In,Mn)As; (Ga,Mn)As; field-effect transistors; carrier-induced ferromagnetism
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We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature T-C but also the magnetization and the coercive force of (In,Mn) As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn) As channel. Results on a (Al,Ga,Mn) As channel FET are also presented.
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