Journal
THIN SOLID FILMS
Volume 425, Issue 1-2, Pages 68-71Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(02)01306-8
Keywords
dielectrics; hafnium; oxidation; X-ray photoelectron spectroscopy (XPS)
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We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O-2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. (C) 2002 Elsevier Science B.V. All rights reserved.
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