Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 5, Pages 823-825Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1544436
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A reactive solid-phase epitaxy technique was applied to fabricate all-oxide transparent p-n heterojunctions composed of p-ZnRh2O4 and n-ZnO thin layers. Polycrystalline ZnRh2O4 was deposited on a ZnO epitaxial layer at room temperature. Thermal annealing of the bilayer sample at 950 degreesC in air converts the polycrystalline ZnRh2O4 layer to an epitaxial single-crystalline layer. The resultant p-n heterojunctions have an abrupt interface and exhibit a distinct rectifying I-V characteristic. The threshold voltage is similar to2 V, agreeing well with the band-gap energy of ZnRh2O4. It also exhibits photovoltage with UV-light illumination, which originates mainly from the n-ZnO layer. (C) 2003 American Institute of Physics.
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