Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 13, Issue 3, Pages 96-98Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2003.810116
Keywords
cryogenic amplifier; GaAs (high electron mobility transistor) HEMT; gain stability
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Cryogenic low-noise two-stage amplifiers were developed for frequency bands of 3.4-4.6 GHz, 4-8 GHz, and 8-9 GHz using commercial GaAs high electron mobility transistor. The performances are in very good agreement with simulations, and at a cryogenic temperature of 12 K, input noise temperatures get as low as 0.6 K/GHz (2.8 K for the 3.4-4.6 GHz LNA and 5 K for the 4-8 GHz and 8-9 GHz LNAs). Gain ranges from 25 to 28 dB. Ultralow noise temperature, low-power consumption, high reliability, and reproducibility make these devices adequate for series production and receiver arrays in, e.g., telescopes.
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