Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 10, Pages 1547-1549Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1559657
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The hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network have been studied by means of infrared absorption spectroscopy. The results on the film mass density of a-Si:H deposited by means of an expanding thermal plasma reveal the presence of two distinct regions in terms of hydrogen content and microstructure: below approximately 14 at. % H a-Si:H contains predominantly divacancies decorated by hydrogen, above 14 at. % H a-Si:H contains microscopic voids. These two distinct regions provide additional information on the origin of the low and high hydride stretching modes at 1980-2010 and 2070-2100 cm(-1), respectively. (C) 2003 American Institute of Physics.
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