Inverse tunnel magnetoresistance in all-perovskite junctions of La0.7Sr0.3MnO3/SrTiO3/SrRuO3 -: art. no. 094413

All epitaxial oxide magnetic tunnel junctions, La0.7Sr0.3MnO3/SrTiO3/SrRuO3 trilayer films, composed of ferromagnetic and metallic electrodes were fabricated on STO(001) substrates. Inverse tunnel magnetoresistance (TMR), i.e., higher and lower junction resistance levels in parallel and anti-parallel magnetization configurations, respectively, was observed, indicating the negative spin polarization of SrRuO3 in contrast to the positive one of La0.7Sr0.3MnO3. The TMR action persists up to T-C of the SrRuO3 layer due to the robust spin polarization at the SrTiO3/SrRuO3 interface.