Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 2, Issue 1, Pages 59-63Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2003.808502
Keywords
backscattering; ballistic transfer; Boltzmann equation; double-gate transistors; Monte Carlo simulation; MOSFET; nanoelectronics
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We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident beam of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.
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