Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 9, Pages 1452-1454Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1556959
Keywords
-
Categories
Ask authors/readers for more resources
Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO2/Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (kappa) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 degreesC. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (BaxSr1-x)TiO3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current <2x10(-8) A/cm(2) at 100 kV/cm. (C) 2003 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available