Journal
ADVANCED MATERIALS
Volume 15, Issue 5, Pages 419-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200390097
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GaN nanowires with diameters in the quantum-confinement size regime (4-10 nm, similar to10 nm in Figure) are prepared on large-area substrates through catalytic reaction of Ga and NH3 in a hot-filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.
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