High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition

GaN nanowires with diameters in the quantum-confinement size regime (4-10 nm, similar to10 nm in Figure) are prepared on large-area substrates through catalytic reaction of Ga and NH3 in a hot-filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.