Journal
APPLIED SURFACE SCIENCE
Volume 208, Issue -, Pages 292-297Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0169-4332(02)01357-0
Keywords
silicon carbide; excimer laser; thermal simulation; doping; pn junction diodes
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As an alternative to classical thermal heating, laser annealing (LA) was recently demonstrated to be suitable for the electrical activation of ion-implanted dopants in SiC. In this work, we demonstrate the possibility to anneal the Al+ ion-implantation induced damage into 4H-SiC by solid phase laser processing using a XeCl excimer source of 200 ns-pulse duration. The electrical activation of the Al dopant was confirmed. by I-V measurements performed directly on mesa pn junction diodes. (C) 2002 Elsevier Science B.V. All rights reserved.
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