Journal
IEEE ELECTRON DEVICE LETTERS
Volume 24, Issue 4, Pages 215-217Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.810881
Keywords
boron penetration; chemical vapor deposition (CVD); hafnium oxide; hafnium oxynitride; thermal stability
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High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride.(HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 degreesC N-2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.
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