MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties

Single phase Ga1-xMnxN diluted magnetic semiconductors films were grown by RF-plasma-assisted molecular beam epitaxy. The films exhibit n-type conduction determined by Hall measurement. SQUID measurement shows the coexistence of ferromagnetic and paramagnetic phases of the GaMnN films. The Curie temperature of low Mn doping Ga1-xMnxN (x = 0.01) is higher than room temperature (300K). For the high Mn doping film, the Ga1-xMnxN (x = 0.04) epilayers show primarily paramagnetic behavior, while a ferromagnetic contribution is present up to 200 K. (C) 2002 Elsevier Science B.V. All rights reserved.