Influence of oxygen on photocurrent multiplication phenomenon at organic/metal interface

Oxygen enhanced the photocurrent multiplication for p-type organic semiconductors. In contrast, oxygen suppressed that for n-type organic semiconductors. These opposite influences of oxygen can be reasonably explained by the opposite multiplication processes of photoinduced hole injection and photoinduced electron injection at organic/metal interfaces for p and n-type semiconductors, respectively. The present effects can be regarded as the multiplied detection of gas molecules.