4.5 Article Proceedings Paper

Magnetoresistance in laser-deposited Zn1-xCoxO thin films

Journal

PHYSICA B-CONDENSED MATTER
Volume 327, Issue 2-4, Pages 304-306

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/S0921-4526(02)01774-X

Keywords

magnetoresistance; diluted magnetic semiconductors; ZnCoO

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We have measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn1-xCoxO (x = 0.02-0.25) thin films doped with 1 mol% Al. Three different MR behaviors are observed depending on the concentration of magnetic Co ions. The Zn1-xCoxO:Al film shows a giant positive MR as high as similar to 60% in 70 kOe at 5 K for x = 0.20. The observed MR features are discussed in terms of weak localization, s-d exchange coupling between the conducting carriers and localized spins of Co ions, and spin-disorder scattering. (C) 2002 Elsevier Science B.V. All rights reserved.

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