4.4 Article

Dynamic process of crystallization of Sb2Se3 from Sb50Se50 amorphous film

Journal

JOURNAL OF CRYSTAL GROWTH
Volume 250, Issue 3-4, Pages 444-449

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(02)02463-6

Keywords

growth models; nanostructures; semiconducting materials

Ask authors/readers for more resources

Dynamics of crystallization of amorphous antimony-selenium film deposited on carbon substrate have been studied by the high-resolution transmission electron microscopy. The amorphous film was suddenly crystallized at 200degreesC by heating in vacuum. By the electron beam irradiation crystallization occurred at the focused electron beam region in the amorphous film. The growth process of crystallization by electron beam irradiation was recorded on a video image at the atomic resolution mode. The growth front of crystallization showed nano-concave and -convex shapes. The recrystallization with the different orientation at the first grown crystal have been found, and discussed as the influence of remaining antimony crystallites at the first crystallized film region. (C) 2003 Elsevier Science B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available