Journal
MICROELECTRONIC ENGINEERING
Volume 66, Issue 1-4, Pages 591-599Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0167-9317(02)00970-X
Keywords
thin films; photonic devices; ferroelectric; gate oxides
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We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications. (C) 2002 Elsevier Science B.V. All rights reserved.
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