Crystallization and disappearance of defects of the annealed silicon nanowires

The crystallization and the disappearance of the defects and impurity stress of silicon nanowires (SiNWs) after annealing at high temperature (900 degreesC) have been investigated. The chemical-vapor-deposition (CVD) and alumina template technology were used for the synthesis of the SiNWs. Then transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL) spectra were used to study the crystallization procedure and the disappearance of defects of the SiNWs. (C) 2003 Elsevier Science B.V. All rights reserved.