4.3 Article Proceedings Paper

Stacking fault tetrahedra formation in the neighbourhood of grain boundaries

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/S0168-583X(02)01829-3

Keywords

nanocrystalline materials; grain boundaries; radiation damage; stacking fault tetrahedra; molecular dynamics

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Large scale molecular dynamics computer simulations are performed to study the role of the grain boundary (GB) during the cascade evolution in irradiated nanocrystalline Ni. At all primary knock-on atom (PKA) energies in cascades near GBs, the damage produced after cooling down is vacancy dominated. Truncated stacking fault tetrahedra (TSFTs) are easily formed at 10 keV and higher PKA energies. At the higher energies a complex partial dislocation network forms, consisting of TSFTs. The GB acts as an interstitial sink without undergoing major structural changes. (C) 2002 Elsevier Science B.V. All rights reserved.

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