Journal
JOURNAL OF MICROSCOPY-OXFORD
Volume 210, Issue -, Pages 74-79Publisher
BLACKWELL PUBLISHING LTD
DOI: 10.1046/j.1365-2818.2003.01175.x
Keywords
gate dielectrics; electron energy-loss spectroscopy; HfO2; transition metal oxides
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We have used conventional high-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy to investigate the microstructure and electronic structure of hafnia-based thin films doped with small amounts (6.8 at.%) of Al grown on (001) Si. The as-deposited film is amorphous with a very thin (similar to0.5 nm) interfacial SiOx layer. The film partially crystallizes after annealing at 700degreesC and the interfacial SiO2 -like layer increases in thickness by oxygen diffusion through the Hf-aluminate layer and oxidation of the silicon substrate. Oxygen K-edge EELS fine-structures are analysed for both films and interpreted in the context of the films' microstructure. We also discuss valence electron energy-loss spectra of these ultrathin films.
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