Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 51, Issue 4, Pages 1227-1233Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2003.809642
Keywords
equivalent circuit; optical-frequency response; photodiodes (PDs); scattering parameters; stored charge; time delay
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A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes (PDs) is proposed to describe the operation at high-input power levels. This model includes both the carrier transit-induced time-delay effect and stored charge effect of p-i-n PDs in high-power operation. These effects were represented as a linear RC circuit [1] and capacitance, respectively, both combined in parallel to a voltage-controlled current source. The validity of this model was confirmed with good curve fitting to the measured optical-frequency responses of an ultrafast side-illuminated p-i-n PD.
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