Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 76, Issue 6, Pages 953-955Publisher
SPRINGER-VERLAG
DOI: 10.1007/s00339-002-1486-5
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Large-area, 1-mum-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N-2-BF3-H-2 gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp(3)-configuration was improved to over 85% at a reduced substrate bias voltage of -40V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions.
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