Journal
JOURNAL OF APPLIED PHYSICS
Volume 93, Issue 8, Pages 4686-4690Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1562741
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A method based on two phase shift measurements at two different modulation frequencies is proposed to determine simultaneously the actual bulk lifetime tau(b) and the surface recombination velocity S in silicon wafers. Such a determination works, irrespectively, of the physical state of the surface or the passivation level, and is based on a microwave contactless technique, which allows mapping of tau(b) and S with a spatial resolution of 50 mum. (C) 2003 American Institute of Physics.
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